Exploring the potential of Wide Band Gap semiconductors in renewable energy system applications: A critical review

The following paper is a critical review of wide band gap semiconductors and the potential they hold in the development of renewable energy systems. With the development of renewable energy systems, there have been an increasing need to adopt semi-conductor materials that improve the performance and reliability of power electronics. In this regard, there have been extensive research into the application of wide band gap materials which offer extensive performance features in power systems performance. The objective of this study is to review novel wide band gap materials, discuss their unique properties that make them ideal for electronic components in renewable energy systems. Using the Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) protocol, a total of 32 studies on six (6) wide band gap semiconductors; Bismuth Tri-iodide, Gallium Nitride, Silicon Carbide, Boron Nitride, and Zinc Oxide and Diamond were reviewed. These materials offer unique performance across multiple domains. They have excellent electron transport abilities, high breakdown voltage, and great thermal conductivity. Beyond optical uses, they can operate effectively in high-power and high-frequency settings with minimal energy loss. The materials are also tough, withstanding thermal, chemical, and mechanical challenges. Their ability to dissipate heat quickly is especially impressive, making them valuable for advanced technological applications.